Growth of ultrathin ZrO2 films on Si(100)

film-thickness-dependent band alignment

Document identifier: oai:dalea.du.se:2699
Access full text here:10.1063/1.2190073
Keyword: Engineering and Technology, Materials Engineering, Teknik och teknologier, Materialteknik, Metal oxides, ZrO2, Band offset
Publication year: 2007
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Abstract:

The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds.

Authors

A. Sandell

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P. G. Karlsson

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J. H. Richter

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J. Blomquist

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P. Uvdal

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Mikael Grehk

Högskolan Dalarna; Materialvetenskap
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