ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic
effects of annealing time
Document identifier: oai:dalea.du.se:2685
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10.1016/j.apsusc.2006.02.167Keyword: Engineering and Technology,
Materials Engineering,
Teknik och teknologier,
Materialteknik,
ToF-SIMS; depth profiling; (Ga,
Mn)As; As cap; Mn diffusionPublication year: 2006Relevant Sustainable Development Goals (SDGs):
The SDG label(s) above have been assigned by OSDG.aiAbstract: The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.
Authors
Ulf Bexell
Högskolan Dalarna; Materialvetenskap
Other publications
>>
V. Stanciu
Other publications
>>
P. Warnicke
Other publications
>>
M. Östh
Other publications
>>
P. Svedlindh
Other publications
>>
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header:
identifier: oai:dalea.du.se:2685
datestamp: 2021-04-15T12:55:14Z
setSpec: SwePub-du
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recordContentSource: du
recordCreationDate: 2007-04-04
identifier:
http://urn.kb.se/resolve?urn=urn:nbn:se:du-2685
10.1016/j.apsusc.2006.02.167
titleInfo:
@attributes:
lang: eng
title: ToF-SIMS depth profiling of (GaMn)As capped with amorphous arsenic
subTitle: effects of annealing time
abstract: The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.
subject:
@attributes:
lang: eng
authority: uka.se
topic:
Engineering and Technology
Materials Engineering
@attributes:
lang: swe
authority: uka.se
topic:
Teknik och teknologier
Materialteknik
@attributes:
lang: eng
topic: ToF-SIMS; depth profiling; (Ga
@attributes:
lang: eng
topic: Mn)As; As cap; Mn diffusion
language:
languageTerm: eng
genre:
publication/journal-article
ref
note:
Published
5
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namePart:
Bexell
Ulf
role:
roleTerm: aut
affiliation:
Högskolan Dalarna
Materialvetenskap
nameIdentifier: ubx
@attributes:
type: personal
namePart:
Stanciu
V.
role:
roleTerm: aut
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type: personal
namePart:
Warnicke
P.
role:
roleTerm: aut
@attributes:
type: personal
namePart:
Östh
M.
role:
roleTerm: aut
@attributes:
type: personal
namePart:
Svedlindh
P.
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roleTerm: aut
originInfo:
dateIssued: 2006
relatedItem:
@attributes:
type: host
titleInfo:
title: Applied Surface Science
identifier:
0169-4332
1873-5584
part:
detail:
@attributes:
type: volume
number: 252
@attributes:
type: issue
number: 19
extent:
start: 7252
end: 7254
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form: print
typeOfResource: text