ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic

effects of annealing time

Document identifier: oai:dalea.du.se:2685
Access full text here:10.1016/j.apsusc.2006.02.167
Keyword: Engineering and Technology, Materials Engineering, Teknik och teknologier, Materialteknik, ToF-SIMS; depth profiling; (Ga, Mn)As; As cap; Mn diffusion
Publication year: 2006
Relevant Sustainable Development Goals (SDGs):
SDG 3 Good health and wellbeing
The SDG label(s) above have been assigned by OSDG.ai

Abstract:

The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.

Authors

Ulf Bexell

Högskolan Dalarna; Materialvetenskap
Other publications >>

V. Stanciu

Other publications >>

P. Warnicke

Other publications >>

M. Östh

Other publications >>

P. Svedlindh

Other publications >>

Record metadata

Click to view metadata