ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic

effects of annealing time

Document identifier:
Access full text here:10.1016/j.apsusc.2006.02.167
Keyword: Engineering and Technology, Materials Engineering, Teknik och teknologier, Materialteknik, ToF-SIMS; depth profiling; (Ga, Mn)As; As cap; Mn diffusion
Publication year: 2006
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The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.


Ulf Bexell

Högskolan Dalarna; Materialvetenskap
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V. Stanciu

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P. Warnicke

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M. Östh

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P. Svedlindh

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