Investigation on the Luminescence Properties of InMO(M = V5+, Nb5+, Ta5+) Crystals Doped with Tb3+ or Yb3+ Rare Earth Ions

Document identifier: oai:DiVA.org:ltu-77773
Access full text here:10.1021/acsomega.9b02862
Keyword: Natural Sciences, Physical Sciences, Other Physics Topics, Naturvetenskap, Fysik, Annan fysik, Experimentell fysik, Experimental Physics
Publication year: 2020
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Abstract:

We explore the potential of Tb- and Yb-doped InVO4, InTaO4, and InNbO4 for applications as phosphors for light-emitting sources. Doping below 0.2% barely change the crystal structure and Raman spectrum but provide optical excitation and emission properties in the visible and near-infrared (NIR) spectral regions. From optical measurements, the energy of the first/second direct band gaps was determined to be 3.7/4.1 eV in InVO4, 4.7/5.3 in InNbO4, and 5.6/6.1 eV in InTaO4. In the last two cases, these band gaps are larger than the fundamental band gap (being indirect gap materials), while for InVO4, a direct band gap semiconductor, the fundamental band gap is at 3.7 eV. As a consequence, this material shows a strong self-activated photoluminescence centered at 2.2 eV. The other two materials have a weak self-activated signal at 2.2 and 2.9 eV. We provide an explanation for the origin of these signals taking into account the analysis of the polyhedral coordination around the pentavalent cations (V, Nb, and Ta). Finally, the characteristic green (5D4 → 7FJ) and NIR (2F5/2 → 2F7/2) emissions of Tb3+ and Yb3+ have been analyzed and explained.

Authors

Pablo Botella

Luleå tekniska universitet; Materialvetenskap
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Francesco Enrichi

Luleå tekniska universitet; Materialvetenskap; Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Venezia, Italy
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Alberto Vomiero

Luleå tekniska universitet; Materialvetenskap
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Juan E. Muñoz-Santiuste

Departamento de Física, MALTA Consolider Team, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Leganés, Spain
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Alka B. Garg

High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai, India
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Ananthanarayanan Arvind

Process Development Division, Bhabha Atomic Research Centre, Mumbai, India
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Francisco J. Manjón

nstituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, València, Spain
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Alfredo Segura

Departamento de Física Aplicada-ICMUV, Universidad de Valencia, MALTA Consolider Team, Edificio de Investigación, Burjassot, Spain
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Daniel Errandonea

Departamento de Física Aplicada-ICMUV, Universidad de Valencia, MALTA Consolider Team, Edificio de Investigación, Burjassot, Spain
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