Behaviour of Si and Ti doped carbon composites under exposure to the deuterium plasma

Document identifier: oai:DiVA.org:ltu-7768
Access full text here:10.1016/S0022-3115(98)00257-8
Keyword: Natural Sciences, Physical Sciences, Other Physics Topics, Naturvetenskap, Fysik, Annan fysik
Publication year: 1998
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Abstract:

Studies of the deuterium interaction with carbon-based substrates were performed for graphite doped either with SiC or with TiC (5% or 10% of Si or Ti) and carbon fibre composites doped with SiC (2.5; 8; 40% of carbide). Non-doped CFC and graphite were used as reference materials. The materials were exposed to the deuterium plasma in a tokamak or in simulators of plasma-surface interactions. The main emphasis was on the determination of the deuterium retention in the near surface region and in the bulk of the composites. Characterisation of the non-exposed and deuterium irradiated substrates was accomplished by means of RBS, NRA, EDS, laser profilometry and ultra-high resolution microscopies. The most important observations are connected with the penetration of the deposited deuterium into the bulk of composites - even a few millimetres beneath the surface. The rate of the process was found to be related to the structure of materials and, to a certain extent, to the content of dopants.

Authors

M, Rubel

Alfvén Laboratory, Royal Institute of Technology, Association EURATOM -NFR
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Nils Almqvist

Luleå tekniska universitet; Materialvetenskap
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P. Wienhold

Institute of Plasma Physics, Forschungszentrum - Jülich, Association EURATOM
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C.H. Wu

NET Team, Max-Planck-Institute for Plasma Physics
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