A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 ◦C

Document identifier: oai:DiVA.org:ltu-76593
Access full text here:10.3390/electronics8111275
Keyword: Engineering and Technology, Electrical Engineering, Electronic Engineering, Information Engineering, Other Electrical Engineering, Electronic Engineering, Information Engineering, Teknik och teknologier, Elektroteknik och elektronik, Annan elektroteknik och elektronik, PTAT, CTAT, Temperature sensor, CMOS, Ultra low power, Calibration free, Electronic systems, Elektroniksystem
Publication year: 2019
Relevant Sustainable Development Goals (SDGs):

The SDG label(s) above have been assigned by OSDG.ai

Abstract:

In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C to +85 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">μ m CMOS technology with a total area of 0.0018 mm 2" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

Authors

Shailesh Singh Chouhan

Luleå tekniska universitet; EISLAB
Other publications >>

Kari Halonen

Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
Other publications >>

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    header: 
        identifier: oai:DiVA.org:ltu-76593
        datestamp: 2021-04-19T12:57:12Z
        setSpec: SwePub-ltu
    metadata: 
        mods: 
            @attributes: 
                version: 3.7
            recordInfo: 
                recordContentSource: ltu
                recordCreationDate: 2019-11-04
            identifier: 
                http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-76593
                10.3390/electronics8111275
                2-s2.0-85074401504
            titleInfo: 
                @attributes: 
                    lang: eng
                title: A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 ◦C
            abstract: 
In this study a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘\ role=\presentation\ style=\box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\>∘C to +85 ∘\ role=\presentation\ style=\box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\>∘C without using any calibration method absolute temperature inaccuracy less than ±0.6 ∘\ role=\presentation\ style=\box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\>∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ\ role=\presentation\ style=\box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\>μ m CMOS technology with a total area of 0.0018 mm 2\ role=\presentation\ style=\box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\>2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

            subject: 
                    @attributes: 
                        lang: eng
                        authority: uka.se
                    topic: 
                        Engineering and Technology
                        Electrical Engineering Electronic Engineering Information Engineering
                        Other Electrical Engineering Electronic Engineering Information Engineering
                    @attributes: 
                        lang: swe
                        authority: uka.se
                    topic: 
                        Teknik och teknologier
                        Elektroteknik och elektronik
                        Annan elektroteknik och elektronik
                    @attributes: 
                        lang: eng
                    topic: PTAT
                    @attributes: 
                        lang: eng
                    topic: CTAT
                    @attributes: 
                        lang: eng
                    topic: temperature sensor
                    @attributes: 
                        lang: eng
                    topic: CMOS
                    @attributes: 
                        lang: eng
                    topic: ultra low power
                    @attributes: 
                        lang: eng
                    topic: calibration free
                    @attributes: 
                        lang: eng
                        authority: ltu
                    topic: Electronic systems
                    genre: Research subject
                    @attributes: 
                        lang: swe
                        authority: ltu
                    topic: Elektroniksystem
                    genre: Research subject
            language: 
                languageTerm: eng
            genre: 
                publication/journal-article
                ref
            note: 
                Published
                2
                
Validerad;2019;Nivå 2;2019-11-04 (svasva)

            name: 
                    @attributes: 
                        type: personal
                        authority: ltu
                    namePart: 
                        Chouhan
                        Shailesh Singh
                    role: 
                        roleTerm: aut
                    affiliation: 
                        Luleå tekniska universitet
                        EISLAB
                    nameIdentifier: shacho
                    @attributes: 
                        type: personal
                    namePart: 
                        Halonen
                        Kari
                    role: 
                        roleTerm: aut
                    affiliation: Department of Electronics and Nanoengineering Aalto University Espoo Finland
            originInfo: 
                dateIssued: 2019
                publisher: MDPI
            relatedItem: 
                @attributes: 
                    type: host
                titleInfo: 
                    title: Electronics
                identifier: 2079-9292
                part: 
                    detail: 
                            @attributes: 
                                type: volume
                            number: 8
                            @attributes: 
                                type: issue
                            number: 11
                            @attributes: 
                                type: artNo
                            number: 1275
            physicalDescription: 
                form: print
            typeOfResource: text